64WQ datasheet(18/46 Pages) NUMONYX

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32WQ and 64WQ Family with Asynchronous RAM

Datasheet

November 2007

Order Number: 251407-13

32WQ and 64WQ Family with Asynchronous RAM

6.0

Electrical Specifications

6.1

DC Characteristics

SRAM and PSRAM DC characteristics are shown in Table 7 and Table 8. Refer to the

Numonyx Wireless Flash Memory (W18) Datasheet (order number 290701) and the

Numonyx Wireless Flash Memory (W30) Datasheet (order number 290702) for flash DC

characteristics.

Table 7:

SRAM DC Characteristics

Parameter

Description

Test Conditions

1.8 V SRAM

3.0 V SRAM

Unit

Min

Max

Min

Max

S-VCC

Voltage Range

1.7

1.95

2.2

3.3

VDR

VCC for Data Retention

1.0

–

1.5

–

ICC

Operating Current at

min cycle time

IIO = 0 mA

–25–

–35–

16M

–

ICC2

Operating Current at

max cycle time (1 μs)

IIO = 0 mA

–

16M

–

ISB

Standby Current

S-CS1# ≥ S-VCC-0.2V

or S-CS2 ≤ VSS+0.2V

Address/Data toggling at

minimum cycle time

–12–

μA

–20–

16M

–

IDR

Current in Data

Retention mode

1.8 V SRAM:

S-VCC = 1.0 V

3.0 V SRAM:

S-VCC = 1.5 V

–6–

μA

–10–

16M

–

VOH

Output HIGH Voltage

IOH = -100 μA

S-VCC -

0.15

–

S-VCC -

0.1

–V

VOL

Output LOW Voltage

IOL = 100 μA,

VCCMIN

-0.1

0.2

-0.1

0.1

VIH

Input HIGH Voltage

S-VCC -

0.4

S-VCC+

0.2

S-VCC -

0.4

S-VCC+

0.2

VIL

Input LOW Voltage

-0.2

0.4

-0.2

0.6

IOH

Output HIGH Current

–

IOL

Output LOW Current

–

*IIL

Input Leakage Current

-0.2 < VIN < S-VCC + 0.2 V

-1

μA

*ILDR

Input Leakage Current

in Data Retention Mode

-0.2 < VIN < S-VCC + 0.2 V

S-VCC = VDR

-1

μA

* Input leakage currents include Hi-Z output leakage for bi-directional buffers with tri-state

outputs.

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