T835H datasheet(2/10 Pages) STMICROELECTRONICS

2 / 10 page

Characteristics

T835H, T850H

2/10

Characteristics

Table 1.

Absolute Maximum Ratings

Symbol

Parameter

Value

Unit

IT(RMS)

RMS on-state current (full sine wave)

D2PAK, TO-220AB

Tc = 135° C

TO-220AB Ins

Tc = 125° C

ITSM

Non repetitive surge peak on-state

current (full cycle, Tj initial = 25° C)

F = 50 Hz

t = 20 ms

F = 60 Hz

t = 16.7 ms

I²tI²t Value for fusing

tp = 10 ms

A²s

dI/dt

Critical rate of rise of on-state current

IG = 2 x IGT , tr ≤ 100 ns

F = 120 Hz

Tj = 150° C

A/µs

VDSM/VRSM

Non repetitive surge peak off-state

voltage

tp = 10 ms

Tj = 25° C

VDRM/VRRM

+ 100

IGM

Peak gate current

tp = 20 µs

Tj = 150° C

PG(AV)

Average gate power dissipation

Tj = 150° C

Tstg

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

° C

Table 2.

Electrical Characteristics (Tj = 25° C, unless otherwise specified)

Symbol

Test Conditions

Quadrant

Value

Unit

T835H

T850H

IGT

(1)

VD = 12 V RL = 33 Ω

I - II - III

MAX.

VGT

I - II - III

MAX.

1.0

VGD

VD = VDRM, RL = 3.3 kΩ

I - II - III

MIN.

0.15

(2)

IT = 500 mA

MAX.

IG = 1.2 IGT

I - III

MAX.

110

dV/dt (2)

VD = 67% VDRM, gate open, Tj = 150° C

MIN.

1000

1500

V/µs

(dI/dt)c (2)

Without snubber, Tj = 150° C

MIN.

A/ms

minimum IGT is guaranted at 20% of IGT max.

for both polarities of A2 referenced to A1.

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