T835H datasheet(5/10 Pages) STMICROELECTRONICS

5 / 10 page

T835H, T850H

Characteristics

5/10

Figure 9.

Relative variation of critical rate of

decrease of main current (dI/dt)c

versus reapplied (dV/dt)c

(typical values)

Figure 10.

Relative variation of critical rate of

decrease of main current versus

junction temperature

Figure 11.

Leakage current versus junction

temperature for different values of

blocking voltage (typical values)

Figure 12.

Variation of thermal resistance

junction to ambient versus copper

surface under tab (Epoxy printed

circuit board FR4,

copper thickness = 35 µm)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.1

1.0

10.0

100.0

(dI/dt)

c [(dV/dt) c ] / Specified (dI/dt)c

(dV/dt)C (V/µs)

100

125

150

(dI/dt)

c [Tj] / (dI/dt)c [Tj=150°C]

Tj(°C)

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

1.0E+03

1.0E+04

100

125

150

DRM/IRRM(µA)

DRM=VRRM=400 V

DRM=VRRM=600 V

DRM=VRRM=200 V

Tj(°C)

th(j-a)(°C/W)

D²PAK

SCU(cm²)

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