L6226Q datasheet(7/28 Pages) STMICROELECTRONICS

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L6226Q

Electrical characteristics

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Electrical characteristics

Table 5.

Electrical characteristcs TA = 25 °C, Vs = 48 V, unless otherwise specified

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

VSth(ON)

Turn-on threshold

5.8

6.3

6.8

VSth(OFF)

Turn-off threshold

5.5

Quiescent supply current

All bridges OFF;

TJ = -25 °C to 125 °C

(1)

510

TJ(OFF)

Thermal shutdown temperature

165

°C

Output DMOS transistors

RDS(on)

High-side + low-side switch ON

resistance

TJ = 25 °C

1.47

1.69

Ω

TJ = 125 °C

(1)

2.35

2.70

Ω

IDSS

Leakage current

EN = Low; OUT = VS

2mA

EN = Low; OUT = GND

-0.3

Source drain diodes

VSD

Forward ON voltage

ISD = 2.8 A, EN = LOW

1.15

1.3

trr

Reverse recovery time

If = 1.4 A

300

tfr

Forward recovery time

200

Logic input

VIL

Low level logic input voltage

-0.3

0.8

VIH

High level logic input voltage

IIL

Low level logic input current

GND logic input voltage

-10

µA

IIH

High level logic input current

7 V logic input voltage

µA

Vth(ON)

Turn-on input threshold

1.8

2.0

Vth(OFF)

Turn-off input threshold

0.8

1.3

Vth(HYS)

Input threshold hysteresis

0.25

0.5

Switching characteristics

tD(on)EN

Enable to out turn ON delay time (2)

ILOAD =1.4 A, resistive load

500

800

tD(on)IN

Input to out turn ON delay time

ILOAD =1.4 A, resistive load

(dead time included)

1.9

µs

tRISE

Output rise time (2)

ILOAD =1.4 A, resistive load

250

tD(off)EN

Enable to out turn OFF delay time (2)

ILOAD =1.4 A, resistive load

500

800

1000

tD(off)IN

Input to out turn OFF delay time

ILOAD =1.4 A, resistive load

500

800

1000

tFALL

Output fall time (2)

ILOAD =1.4 A, resistive load

250

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