M61556FP

Rev.1.0, Sep.19.2003, page 8 of 13

I/O Timing

tpf

INA+,INB+

tpw

HSGOUTA /B

LSGOUTA/B

Td

Dead time

Dead time

Td

Dead Time

To prevent the M61556FP from being destroyed by the shoot-through current from an external MOSFET device, dead

time is provided between HSGOUTA and LSGOUTA as well as between HSGOUTB and LSGOUTB. Refer to the

Dead Time Control section below for information on adjusting the dead time.

Function

Signal System

1. Dead Time Control Settings

The dead time, which protects the M61556FP from being destroyed by the shoot-through current from an external

MOSFET device, can be adjusted as desired by the user by adjusting the external resistor (R) connected to pin 12.

It is possible to adjust the dead times of the high and low sides by setting the dead time control pins of side-A and side-

B to 0 V or 12 V. This makes it easy to tailor the dead time to account for minute variations due to circuit board layout

and to match the characteristics of the connected MOSFET devices.

Relationship Between Pin 12 Resistor, Dead Time Setting, and Output Shoot-Through Current

Pin 12 Resistance Value

Small

← →

Large

Dead time setting

Short

← →

Long

Output stage shoot-through current

Large shoot-through current

← →

Small shoot-through current

Note:

Dead time values are averages for the high and low sides.