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SH7052 Datasheet(PDF) 744 Page - Renesas Technology Corp |
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SH7052 Datasheet(HTML) 744 Page - Renesas Technology Corp |
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744 / 919 page ![]() 718 20.8.2 Software Protection Software protection can be implemented by setting the SWE1 bit in FLMCR1, erase block register 1 (EBR1), erase block register 2 (EBR2), and the RAMS bit in the RAM emulation register (RAMER). When software protection is in effect, setting the P1 or E1 bit in flash memory control register 1 (FLMCR1), does not cause a transition to program mode or erase mode. (See table 20.11.) Table 20.11 Software Protection Functions Item Description Program Erase SWE bit protection • Setting bit SWE1 in FLMCR1 to 0 sets the program/erase-protected state. (Execute the program in the on-chip RAM, external memory.) Yes Yes Block specification protection • Erase protection can be set for individual blocks by settings in erase block register 1 (EBR1) and erase block register 2 (EBR2). • Setting EBR1 and EBR2 to H'00 places all blocks in the erase-protected state. — Yes Emulation protection • Setting the RAMS bit to 1 in the RAM emulation register (RAMER) places all blocks in the program/erase-protected state. Yes Yes 20.8.3 Error Protection In error protection, an error is detected when SH7052F/SH7053F runaway occurs during flash memory programming/erasing, or operation is not performed in accordance with the program/erase algorithm, and the program/erase operation is aborted. Aborting the program/erase operation prevents damage to the flash memory due to overprogramming or overerasing. If the SH7052F/SH7053F malfunctions during flash memory programming/erasing, the FLER bit is set to 1 in FLMCR2 and the error protection state is entered. The FLMCR1, FLMCR2, EBR1, and EBR2 settings are retained, but program mode or erase mode is aborted at the point at which the error occurred. Program mode or erase mode cannot be re-entered by re-setting the P1 or E1 bit. However, PV1 and EV1 bit setting is enabled, and a transition can be made to verify mode. FLER bit setting conditions are as follows: 1. When the flash memory of the relevant address area is read during programming/erasing (including vector read and instruction fetch) |
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