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HV311LG Datasheet(PDF) 6 Page - Supertex, Inc |
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HV311LG Datasheet(HTML) 6 Page - Supertex, Inc |
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6 / 21 page  6 HV301/HV311 From the calculated resistor values the OV and UV start up threshold voltages can be calculated as follows: UV V V RR RR R OV V V R RR R ON UVH EEUV on ON OVL EEOV on == = × + ++ == = × ++ 126 23 12 3 116 3 12 3 . . () () Where | V EEUV(on)| and |VEEOV(on)| are Under & Over Voltage Start Up Threshold points relative to V EE. Then V RR R RR V V RR R R V EEUV on EEUV on EEOV on EEOV on () () () () . . .. .. . . . .. . =× ++ + =× ++ + = =× ++ =× ++ 126 12 3 23 126 487 6 81 9 76 681 9 76 38 29 116 12 3 3 116 487 6 81 9 76 976 kk k kk V And kk k k ΩΩ Ω ΩΩ ΩΩ Ω Ω = = 59 85 .V Therefore, the circuit will start when the input supply voltage is in the range of 38.29V to 59.85V. Design Information, cont’d. Undervoltage/Overvoltage Operation Programming Inrush and I CB (Circuit Breaker) Method 1: Inrush independent of I CB Max Vt of a typical power FET GND VIN Pass Transistor OFF ON UVOFF UVON OVOFF OVON VSENSE + K – + – + – 5k 2.5 µA 7.5 µA 10 µA 10V 10n 0 µA 0 µA RAMP GATE 7.5 µA Vgs Cgs Cgd C2 – + inrush Rsense=12.5m Ω Cdb (DRAIN) Cload=100 µF Vin dv df on Cramp constant during limiting so no current flowing into cap gm(Vgs-Vt) VSENSE VSENSE 5k 10V 10n=Cramp RAMP terminal GATE Termial 1 : 2 Isink 10 µA Internal Circuitry mirror C2 0.75nF Rsense Vsense Cload 48V 10 µA 1. Choose circuit breaker trip point eg. 8A as follows Rsense = Choose inrush level, for example Inrush = 1A 3. Calculate Isink Inrush *Rsense 2.5 A 4. Calculate C discharge limit = 10 A -Isink = 7.5 A (typical) = iC 4a. Adjust for Auto - retry disable, if used Vt R e.g. 4V 2.5M = 1.6 A e.g. iC = 10 A -Isink -1.6 A 2 2 max disable 2 100 100 8 12 5 2 5 112 5 5 mV I mV m k Am k CB == == × =µ µµ → ≅ Ω µ ⇒ µµ . . . Ω Ω Ω Ω In this example we assume Auto In this example we assume Auto - retry is enabled so ignore 1.6 A, iC = 10 A -Isink = 7.5 A 5. Note: i = C iC = C Inrush = C Note V is fixed and V is constant during limiting across C = across C (as they share a common node and their other terminals are fixed during inrush) Inrush = by conservation of charge on RAMP Node iC = 7.5 A Inrush = . 2 22 load IN RAMP load 2 2 µ ∴ µµ ×× ⇒ = ⇒ × µ µ× dv dt dv dt dv dt dv dt dv dt iC C Inrush C iC C C AC load load load 2 2 2 2 75 C C AC Inrush AnF A load 2 75 75 100 1 ⇒ µ× = µ× C= . = 750pF = 0.75nF Note that RAMP is protected by AC divider and Gate is clamped internally. 2 . |
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