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LTC3561A Datasheet(PDF) 3 Page - Linear Technology |
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LTC3561A Datasheet(HTML) 3 Page - Linear Technology |
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3 / 20 page ![]() LTC3561A 3 3561af ELECTRICAL CHARACTERISTICS The ● denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VIN = 3.6V, RT = 125k unless otherwise specified. (Note 2) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS IS Input DC Supply Current (Note 4) Active Mode Shutdown VFB = 0.75V VSHDN/RT = 3.6V 330 0.1 450 1 μA μA VSHDN/RT Shutdown Threshold High Active Oscillator Resistor VIN – 0.6 125k VIN – 0.4 1M V Ω fOSC Oscillator Frequency RT = 125k (Note 7) 2.25 2.5 2.8 4 MHz MHz ILIM Peak Switch Current Limit VFB = 0.5V 1.3 2.0 2.5 A RDS(ON) Top Switch On-Resistance (Note 6) 0.15 0.18 Ω Bottom Switch On-Resistance (Note 6) 0.13 0.16 Ω ISW(LKG) Switch Leakage Current VIN = 5V, VSHDN/RT = 3.6V, VSW = 0V or 5V 0.01 1 μA VUVLO Undervoltage Lockout Threshold VIN Ramping Down 1.8 2.1 2.4 V tSOFT-START 10% to 90% of Regulation 0.5 0.8 1 ms Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The LTC3561AEDD is guaranteed to meet specified performance specifications from 0°C to 85°C junction temperature. Specifications over the –40°C to 125°C operating junction temperature range are assured by design, characterization and correlation with statistical process controls. The LTC3561AIDD is guaranteed over the full –40°C to 125°C operating junction temperature range. Note 3: The LTC3561A is tested in a feedback loop which servos VFB to the midpoint for the error amplifier (VITH = 0.7V). Note 4: Dynamic supply current is higher due to the internal gate charge being delivered at the switching frequency. Note 5: TJ is calculated from the ambient TA and power dissipation PD according to the following formulas: TJ = TA + (PD • 43°C/W) Note 6: Switch on-resistance is sampled at wafer level measurements and assured by design, characterization and correlation with statistical process controls. Note 7: 4MHz operation is guaranteed by design but not production tested and is subject to duty cycle limitations (see Applications Information). Note 8: This IC includes overtemperature protection that is intended to protect the device during momentary overload conditions. Junction temperature will exceed 125°C when overtemperature protection is active. Continuous operation above the specified maximum operating junction temperature may impair device reliability. |
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