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LTC3561A Datasheet(PDF) 3 Page - Linear Technology

Part # LTC3561A
Description  1A, 4MHz, Synchronous Step-Down DC/DC Converter
PDF  20 Pages
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Manufacturer  LINER [Linear Technology]
Direct Link  http://www.linear.com
Logo LINER - Linear Technology

LTC3561A Datasheet(HTML) 3 Page - Linear Technology

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LTC3561A
3
3561af
ELECTRICAL CHARACTERISTICS The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VIN = 3.6V, RT = 125k unless otherwise specified. (Note 2)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
IS
Input DC Supply Current (Note 4)
Active Mode
Shutdown
VFB = 0.75V
VSHDN/RT = 3.6V
330
0.1
450
1
μA
μA
VSHDN/RT
Shutdown Threshold High Active
Oscillator Resistor
VIN – 0.6
125k
VIN – 0.4
1M
V
Ω
fOSC
Oscillator Frequency
RT = 125k
(Note 7)
2.25
2.5
2.8
4
MHz
MHz
ILIM
Peak Switch Current Limit
VFB = 0.5V
1.3
2.0
2.5
A
RDS(ON)
Top Switch On-Resistance
(Note 6)
0.15
0.18
Ω
Bottom Switch On-Resistance
(Note 6)
0.13
0.16
Ω
ISW(LKG)
Switch Leakage Current
VIN = 5V, VSHDN/RT = 3.6V, VSW = 0V or 5V
0.01
1
μA
VUVLO
Undervoltage Lockout Threshold
VIN Ramping Down
1.8
2.1
2.4
V
tSOFT-START
10% to 90% of Regulation
0.5
0.8
1
ms
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3561AEDD is guaranteed to meet specified performance
specifications from 0°C to 85°C junction temperature. Specifications over
the –40°C to 125°C operating junction temperature range are assured by
design, characterization and correlation with statistical process controls.
The LTC3561AIDD is guaranteed over the full –40°C to 125°C operating
junction temperature range.
Note 3: The LTC3561A is tested in a feedback loop which servos VFB to the
midpoint for the error amplifier (VITH = 0.7V).
Note 4: Dynamic supply current is higher due to the internal gate charge
being delivered at the switching frequency.
Note 5: TJ is calculated from the ambient TA and power dissipation PD
according to the following formulas:
TJ = TA + (PD • 43°C/W)
Note 6: Switch on-resistance is sampled at wafer level measurements and
assured by design, characterization and correlation with statistical process
controls.
Note 7: 4MHz operation is guaranteed by design but not production tested
and is subject to duty cycle limitations (see Applications Information).
Note 8: This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperature will exceed 125°C when overtemperature protection is active.
Continuous operation above the specified maximum operating junction
temperature may impair device reliability.



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