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TMS418160ADZ Datasheet(PDF) 14 Page - Texas Instruments |
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TMS418160ADZ Datasheet(HTML) 14 Page - Texas Instruments |
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14 / 24 page ![]() TMS418160A 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY SMKS891C – AUGUST 1996 – REVISED OCTOBER 1997 14 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 PARAMETER MEASUREMENT INFORMATION RAS xCAS Address W OE DQ0 – DQ15 tRWC Row Column Don’t Care Don’t Care Don’t Care Data Out Don’t Care Don’t Care Data In tRAS tRCD tT tCAS tRP tCRP tCP tT tCAH tASC tRAH tASR tRAD tRCS tRWD tRWL tWP tAWD tCWD tCAC tDS tDH tAA tCLZ tRAC tOEA tOEZ tOEH See Note A tCWL tOHO tOED NOTE A: Output can go from high-impedance state to an invalid-data state prior to the specified access time. Figure 6. Read-Write-Cycle Timing |
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