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TMS418160ADZ Datasheet(PDF) 15 Page - Texas Instruments |
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TMS418160ADZ Datasheet(HTML) 15 Page - Texas Instruments |
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15 / 24 page ![]() TMS418160A 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY SMKS891C – AUGUST 1996 – REVISED OCTOBER 1997 15 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 PARAMETER MEASUREMENT INFORMATION Don’t Care Don’t Care Valid Out Valid Out Valid Out RAS UCAS Address W DQ8 – DQ15 DQ0 – DQ7 OE Column Column tRASP tRCD tCRP tRP tRSH tPC tCP tASR tRAH tASC tCAH tCAL tRAL tRAD tRCH tRRH tOHO tOEZ tRCS tAA tRAC tAA tOEA LCAS Row Don’t Care tCAC Don’t Care tCPA tCSH tCAS tCLZ tRHCP (see Note C) tOH See Note D See Note D tOHO tOEA tOFF Don’t Care Don’t Care (see Note B) tCLCH (see Note A) tCAS NOTES: A. To hold the address latched by the first xCAS going low, the parameter tCLCH must be met. B. tCAC is measured from xCAS to its corresponding DQx. C. Access time is tCPA-, tAA-, or tCAC-dependent. D. Output can go from the high-impedance state to an invalid-data state prior to the specified access time. E. A write cycle or read-modify-write cycle can be mixed with the read cycles as long as the write- and read-modify-write timing specifications are not violated. F. xCAS order is arbitrary. Figure 7. Enhanced-Page-Mode Read-Cycle Timing |
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