TPIC1501 datasheet(4/17 Pages) TI

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TPIC1501A

QUAD AND HEX POWER DMOS ARRAY

SLIS046A – MAY 1995 – REVISED JUNE 1996

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

source-to-drain diode characteristics, Q1A, Q2A, TC = 25°C

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

trr

Reverse-recovery time

IS = 1.5 A,

VDS 14 V

VGS = 0,

di/dt

100 A/

µs

QRR

Total diode charge

VDS = 14 V,

See Figures 1 and 23

di/dt = 100 A/

µs,

trr

Reverse-recovery time

IS = 2 A,

VGS = 0,

QRR

Total diode charge

VDS = 14 V,

di/dt = 100 A/

µs

110

resistive-load switching characteristics, Q1A, Q1B, Q2A, Q2B, TC = 25°C

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

td(on)

Turn-on delay time

td(off)

Turn-off delay time

VDD = 14 V,

RL = 9.3 Ω,ten = 10 ns,

Rise time

tdis = 10 ns,

See Figure 3

Fall time

Total gate charge

V14 V

I1 5 A

V10 V

5.6

Qgs(th)

Threshold gate-to-source charge

VDS = 14 V,

See Figure 4

ID = 1.5 A,

VGS = 10 V,

0.8

Qgd

Gate-to-drain charge

See Figure 4

1.4

1.75

L(drain)

Internal drain inductance

L(source) Internal source inductance

r(gate)

Internal gate resistance

0.25

Ω

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