TPIC1501A

QUAD AND HEX POWER DMOS ARRAY

SLIS046A – MAY 1995 – REVISED JUNE 1996

3

POST OFFICE BOX 655303

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)DSX

Drain-to-source breakdown voltage

ID = 250 µA,

VGS = 0

20

V

VGS(th)

Gate-to-source threshold voltage

ID = 1 mA,

See Figure 5

VDS = VGS,

1.4

1.7

2.1

V

VGS(th)match Gate-to-source threshold voltage matching

ID = 1 mA,

VDS = VGS

40

mV

V(BR)

Reverse drain-to-GND breakdown voltage

Drain-to-GND current = 250

µA

(D1, D2)

20

V

VDS(on)

Drain-to-source on-state voltage

ID = 2 A,

See Notes 3 and 4

VGS = 10 V,

0.2

0.24

V

VF

Forward on-state voltage, GND-to-VDD1,

GND-to-VDD2

ID = 3 A (D1, D2)

See Notes 3 and 4

1.8

V

IS = 2 A,

VGS = 0,

085

105

VF(SD)

Forward on state voltage source to drain

See Notes 3 and 4 and Figure 19

0.85

1.05

V

VF(SD)

Forward on-state voltage, source-to-drain

IS = 3 A,

VGS = 0,

09

11

V

See Notes 3 and 4 and Figure 19

0.9

1.1

IDSS

Zero gate voltage drain current

VDS = 16 V,

TC = 25°C

0.05

1

µA

IDSS

Zero-gate-voltage drain current

DS

,

VGS = 0

TC = 125°C

0.5

10

µA

IGSSF

Forward-gate current, drain short circuited

to source

VGS = 16 V,

VDS = 0

10

100

nA

IGSSR

Reverse-gate current, drain short circuited

to source

VSG = 16 V,

VDS = 0

10

100

nA

Ilk

Leakage current, VDD1-to-GND,

VDGND =16V

TC = 25°C

0.05

1

µA

Ilkg

g,

DD1

,

VDD2-to-GND, gate shorted to source

VDGND = 16 V

TC = 125°C

0.5

10

µA

VGS = 10 V,

ID = 2 A,

TC = 25°C

0.1

0.12

rDS( )

Static drain to source on state resistance

D

,

See Notes 3 and 4

and Figure 9

TC = 125°C

0.14

0.18

Ω

rDS(on)

Static drain-to-source on-state resistance

VGS = 10 V,

ID = 3 A,

TC = 25°C

0.1

0.12

Ω

D

,

See Notes 3 and 4

and Figures 7 and 9

TC = 125°C

0.14

0.18

Fd t

d

t

VDS = 14 V,

See Notes 3 and 4

ID = 1 A,

1.5

2.5

S

gfs

Forward transconductance

VDS = 14 V,

ID = 1.5 A,

2

31

S

See Notes 3 and 4 and Figure 13

2

3.1

Ciss

Short-circuit input capacitance, common

source

240

Coss

Short-circuit output capacitance, common

source

VDS = 14 V,

f = 1 MHz,

VGS = 0,

See Figure 17

170

pF

Crss

Short-circuit reverse transfer capacitance,

common source

130

αs

Sense-FET drain current ratio

VDS = 6 V,

ID(Q2C) = 40 µA

75

130

200

NOTES:

3. Technique should limit TJ – TC to 10°C maximum.

4. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.