OMAP3530 datasheet(95/239 Pages) TI

95 / 239 page

3.2 Absolute Maximum Ratings

OMAP3525-HiRel and OMAP3530-HiRel Applications Processors

www.ti.com

SPRS599 – JUNE 2009

The following table specifies the absolute maximum ratings over the operating junction temperature range

of OMAP commercial and extended temperature devices. Stresses beyond those listed under absolute

maximum ratings may cause permanent damage to the device. These are stress ratings only and

functional operation of the device at these or any other conditions beyond those indicated under

recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for

extended periods may affect device reliability.

Notes:

• Logic functions and parameter values are not assured out of the range specified in the recommended

operating conditions.

• The OMAP3525 and OMAP3530 devices adhere to EIA/JESD22–A114, Electrostatic Discharge (ESD)

Sensitivity Testing Human Body Model (HBM). Minimum pass level for HBM is

±2 kV.

Table 3-1. Absolute Maximum Ratings Over Operating Junction Temperature Range

PARAMETER

MIN

MAX

UNIT

vdd_mpu_iva

Supply voltage range for core macros

–0.5

1.6

vdd_core

vdds

Second supply voltage range for 1.8-V I/O macros

–0.5

2.25

vdds_mem

vdds_mmc1

Supply voltage range for MMC1 CMD, CLK and

1.8-V mode

–0.5

2.45

DAT[3:0] and for memory stick I/Os

3.0-V mode

-0.5

3.50

vdds_vdds_mm

Second supply voltage range for =MMC1 DAT[7:4]

1.8-V mode

–0.5

2.45

c1a

3.0-V mode

-0.5

3.50

vdds_dpll_dll

Supply voltage for DLL DPLL

–0.5

2.10

vdds_dpll_per

Supply voltage for Per DPLL

vdds_sram

Supply voltage for SRAM LDOs

–0.5

2.25

vdds_wkup_bg

Supply voltage for wakeup LDO and VDDA (2 LDOs SRAM and BG)

VPAD

Voltage range

MMC1, MS (Balls N28, M27, N27,

Supply voltage range

–0.54(1)

2.34(1)

at PAD

N26, N25, P28)

for 1.8-V IOs

MMC1(Balls P27, P26, R27, R25)

Supply voltage range

–0.45(2)

3.45(2)

for 3.0-V IOs

I2C1, I2C2, I2C3, I2C4 (Balls K21, J21, AF15, AE15, AF14,

–0.63(1)

2.73(1)

AG14, AD26, AE26)

Crystal (xtalin/xtalout) (Balls AE17, AF17)

–0.5

2.71

Other balls

–0.5

vddsx(3) + 0.5

vdda_dac

Supply voltage range for analog macros

–0.5

2.43

VESD

ESD stress

HBM (human body model)(5)

2000

voltage(4)

CDM (charged device model)(6)

500

IIOI

Current-pulse injection on each I/O pin(7)

200

Iclamp

Clamp current for an input or output

–20

Tstg

Storage temperature range(8)

–65

150

°C

(1)

For a maximum time of 30% time period.

(2)

For a maximum time of 15% time period.

(3)

) Depending on ball, vddsx can be vdds_mem or vdds.

(4)

Electrostatic discharge (ESD) to measure device sensitivity/immunity to damage caused by electrostatic discharges into the device.

(5)

JEDEC JESD22–A114 D with the following exception-no connect pins are not stressed. 2000V Human Body Model (HBM)

(6)

JEDEC JESD22–C101C with the following exception-split out pin groupings to eliminate cumulative stress effect

(7)

Each device is tested with I/O pin injection of 200 mA with a stress voltage of 1.5 times maximum vdd at room temperature.

(8)

These temperatures extreme do not simulate actual operating conditions but exaggerate any faults that might exist.

Submit Documentation Feedback

ELECTRICAL CHARACTERISTICS

OMAP3530 Datasheet(PDF) 95 Page - Texas Instruments

OMAP3530 Datasheet(HTML) 95 Page - Texas Instruments

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

Datasheet Download

Link URL