 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
HS54095 Datasheet(PDF) 1 Page - Renesas Technology Corp |
|
|
|||||||||||||||||||||||||||||
HS54095 Datasheet(HTML) 1 Page - Renesas Technology Corp |
|
|
1 / 7 page  REJ03G1668-0200 Rev.2.00 Dec 10, 2009 Page 1 of 1 HS54095 Silicon N Channel MOS FET High Speed Power Switching REJ03G1668-0200 Rev.2.00 Dec 10, 2009 Features • Low on-resistance RDS(on) = 13.5 Ω typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25°C) • Low drive current • High density mounting Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1)) 1. Gate 2. Drain 3. Source 3 2 1 D S G Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 600 V Gate to source voltage VGSS ±30 V Drain current ID 0.2 A Drain peak current ID (pulse) Note1 0.8 A Body-drain diode reverse drain current IDR 0.2 A Body-drain diode reverse drain peak current IDR (pulse) Note1 0.8 A Channel dissipation Pch 0.75 W Channel to ambient thermal impedance θ ch-a 166.7 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% |
Similar Part No. - HS54095 |
|
Similar Description - HS54095 |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
