HS54095 datasheet(2/7 Pages) RENESAS

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HS54095

REJ03G1668-0200 Rev.2.00 Dec 10, 2009

Page 2 of 2

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown voltage

V(BR)DSS

600

—

ID = 10 mA, VGS = 0

Zero gate voltage drain current

IDSS

—

μA

VDS = 600 V, VGS = 0

Gate to source leak current

IGSS

—

±0.1

μA

VGS = ±30 V, VDS = 0

Gate to source cutoff voltage

VGS(off)

—

VDS = 10 V, ID = 1 mA

Static drain to source on state

resistance

RDS(on)

—

13.5

16.5

ID = 0.1 A, VGS = 10 V

Note2

Input capacitance

Ciss

—

Output capacitance

Coss

—

8.7

—

Reverse transfer capacitance

Crss

—

1.3

—

VDS = 25 V

VGS = 0

f = 1 MHz

Turn-on delay time

td(on)

—

Rise time

—

Turn-off delay time

td(off)

—

Fall time

—

175

—

ID = 0.1 A

VGS = 10 V

RL = 3000 Ω

Rg = 10

Total gate charge

—

4.8

—

Gate to source charge

Qgs

—

0.6

—

Gate to drain charge

Qgd

—

3.2

—

VDD = 480 V

VGS = 10 V

ID = 0.2 A

Body-drain diode forward voltage

VDF

—

0.77

1.30

IF = 0.2 A, VGS = 0

Note2

Body-drain diode reverse recovery time

trr

—

220

—

IF = 0.2 A, VGS = 0

diF/dt = 50 A/μs

Notes: 2. Pulse test

3. Since this device is equipped with high voltage FET chip (VDSS ≥ 600 V), high voltage may be supplied.

Therefore, please be sure to confirm about Electric discharge between Drain terminal and other terminal.

4. This device is sensitive to electrostatic discharge.

It is recommended to adopt appropriate cautions when handling this product.

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