HS54095 datasheet(3/7 Pages) RENESAS

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HS54095

REJ03G1668-0200 Rev.2.00 Dec 10, 2009

Page 3 of 3

Main Characteristics

0.8

0.6

0.4

0.2

Drain to Source Voltage VDS (V)

Typical Output Characteristics

Gate to Source Voltage VGS (V)

Typical Transfer Characteristics

0.01

0.1

100

Drain Current ID (A)

Static Drain to Source on State Resistance

vs. Drain Current (Typical)

Drain to Source Voltage VDS (V)

Maximum Safe Operation Area

Case Temperature Tc (

°C)

Static Drain to Source on State Resistance

vs. Temperature (Typical)

234

-25

100 125 150

0.001

0.01

0.1

100

1000

0.1

0.3

1000

100

Reverse Drain Current IDR (A)

Body-Drain Diode Reverse

Recovery Time (Typical)

di / dt = 50 A /

μs

VGS = 0, Ta = 25°C

VGS = 10 V

Pulse Test

ID = 0.4 A

−25°C

Tc = 75

°C

VGS = 10 V

Ta = 25

°C

Pulse Test

0.1 A

3.8 V

4.2 V

4.4 V

4.6 V

3.6V

VGS = 3.4 V

4 V

Ta = 25

°C

Pulse Test

Ta = 25

°C

1 shot

Operation in this

area is limited by

RDS(on)

μs

5 V

10 V

0.1

0.01

0.001

VDS = 10 V

Pulse Test

0.2 A

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