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SS6612 Datasheet(PDF) 12 Page - Silicon Standard Corp. |
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SS6612 Datasheet(HTML) 12 Page - Silicon Standard Corp. |
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12 / 16 page ![]() www.SiliconStandard.com 12 of 16 Rev.2.02 12/06/2003 SS6612 regulation (<10mV). A bypass capacitor of 0.1 µF is required for proper operation and good performance. Shutdown The whole circuit is shutdown when SHDN V is low. In shutdown mode, the current can flow from the battery to the output due to the body diode of the P-MOSFET. VOUT falls to approximately (Vin - 0.6V) and LX remains high impedance. The capacitance and load at OUT de- termine the rate at which VOUT decays. Shutdown can be pulled as high as 6V, regardless of the volt- age at OUT. Current Limit Select Pin The SS6612 allows a selectable inductor current limit of either 1.0A or 0.65A, allowing the flexibility to design for higher current or smaller applications. CLSEL draws 1.4 µA when connecting to OUT. BATT/Damping Switch The SS6612 is designed with an internal damping switch (Fig.33) to reduce ringing at LX. The damping switch supplies a path to quickly dissipate the energy stored in the inductor and reduces the ringing at LX. Damping LX ringing does not reduce VOUT ripple, but does reduce EMI. R1=200 Ω works well for most applications while reducing efficiency by only 1%. Larger R1 values provide less damping, but less im- pact on efficiency. In principle, a lower value of R1 is needed to fully damp LX when VOUT /VIN ratio is high. Selecting the Output Voltage VOUT can be simply set to 3.3V/5.0V by connecting the FB pin to OUT/GND due to the use of an internal resis- tor divider in the IC (Fig.34 and Fig.35). In order to adjust the output voltage, a resistor divider is connected to VOUT, FB, GND (Fig.36). Vout can be calculated by the following equation: R5 = R6 [(VOUT / VREF )-1] .....................................(1) where V REF =1.23V and VOUT ranges from 1.8V to 5.5V. The recommended R6 is 240k Ω. Low-Battery Detection The SS6612 contains an on-chip comparator with 50mV internal hysteresis (REF, REF+50mV) for low battery detection. If the voltage at LBI falls below the internal reference voltage, LBO (an open-drain output) sinks current to GND. Component Selection 1. Inductor Selection An inductor value of 22 µH performs well in most applications. The SS6612 also works with inductors in the 10 µH to 47µH range. An inductor with higher peak inductor current creates a higher output voltage ripple (IPEAK×output filter capaci- tor ESR). The inductor’s DC resistance signifi- cantly affects efficiency. We can calculate the maximum output current as follows: η × − − = L 2 V V t I V V I IN OUT OFF LIM OUT IN ) MAX ( OUT ........................................................................ (2) where IOUT(MAX)=maximum output current in amps VIN=input voltage L=inductor value in µH η=efficiency (typically 0.9) tOFF=LX switch’ off-time in µs ILIM=1.0A or 0.65A 2. Capacitor Selection The output ripple voltage is related to the peak inductor current and the output capacitor ESR. Besides output ripple voltage, the output ripple current may also be of concern. A filter capacitor with low ESR is helpful to the efficiency and the steady state output current of the SS6612. Therefore a NIPPON MCM series tantalum capacitor of 100 µF/6V is recommended. A smaller capacitor (down to 47µF with higher ESR) is ac- ceptable for light loads or in applications that can tolerate higher output ripple. |
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