2N7002KA_3

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 03 — 25 February 2008

3 of 11

NXP Semiconductors

2N7002KA

N-channel TrenchMOS FET

Fig 1.

Normalized total power dissipation as a

function of solder point temperature

Fig 2.

Normalized continuous drain current as a

function of solder point temperature

Fig 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage

0

200

150

50

100

003aab946

40

80

120

(%)

0

0

200

150

50

100

003aac033

40

80

120

( %)

0

P

der

P

tot

P

tot 25

°C

()

------------------------

100 %

×

=

I

der

I

D

I

D25

°C

()

--------------------

100 %

×

=

003aab788

10

-2

10

-1

1

10

1

10

10

2

(A)

DC

100 ms

10 ms

1 ms

100

µs