2N7002KA datasheet(6/11 Pages) NXP

6 / 11 page

2N7002KA_3

Product data sheet

Rev. 03 — 25 February 2008

6 of 11

NXP Semiconductors

2N7002KA

N-channel TrenchMOS FET

Tj =25 °CTj =25 °C

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 6.

Drain-source on-state resistance as a function

of drain current; typical values

Tj =25 °C and 150 °C; VDS >ID × RDSon

Fig 7.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 8.

Normalized drain-source on-state resistance

factor as a function of junction temperature

003aab352

0.2

0.4

0.6

0.8

012

VDS (V)

(A)

4.5

3.5

VGS (V) =

003aab353

2000

4000

6000

8000

10000

0.2

0.4

0.6

0.8

ID (A)

RDSon

Ω)

4.5

VGS (V) =

003aab354

0.2

0.4

0.6

0.8

0246

VGS (V)

(A)

Tj = 150 °C

°C

Tj (°C)

−60

180

120

060

003aac034

1.2

0.6

1.8

2.4

DSon

DSon 25

°C

()

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