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2N7002KA Datasheet(PDF) 1 Page - NXP Semiconductors |
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2N7002KA Datasheet(HTML) 1 Page - NXP Semiconductors |
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1 / 11 page ![]() 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 2N7002KA N-channel TrenchMOS FET Rev. 03 — 25 February 2008 Product data sheet I Logic level compatible I Very fast switching I Subminiature surface-mounted package I Gate-source ElectroStatic Discharge (ESD) protection diodes I Relay driver I High-speed line driver I VDS ≤ 60 V I ID ≤ 320 mA I RDSon ≤ 4.4 Ω I Ptot ≤ 0.83 W Table 1. Pinning Pin Description Simplified outline Symbol 1 gate (G) SOT23 (TO-236AB) 2 source (S) 3 drain (D) 12 3 G D S 003aac036 |
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