2N7002KA datasheet(5/11 Pages) NXP

5 / 11 page

2N7002KA_3

Product data sheet

Rev. 03 — 25 February 2008

5 of 11

NXP Semiconductors

2N7002KA

N-channel TrenchMOS FET

Characteristics

Table 5.

Characteristics

Tj =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source breakdown

voltage

ID =10 µA; VGS =0V

Tj =25 °C

6075-

Tj = −55 °C

--V

V(BR)GSS

gate-source breakdown

voltage

IG = ±1 mA; VDS = 0 V

VGS(th)

gate-source threshold voltage ID = 1 mA; VDS =VGS; see Figure 9 and 10

Tj =25 °C

12-

Tj = 150 °C

0.6

Tj = −55 °C

3.5

IDSS

drain leakage current

VDS =48V; VGS =0V

Tj =25 °C

0.01

µA

Tj = 150 °C

--10

µA

IGSS

gate leakage current

VGS = ±10 V; VDS = 0 V

500

RDSon

drain-source on-state

resistance

VGS = 10 V; ID = 500 mA; see Figure 6 and 8

Tj =25 °C

2.8

4.4

Ω

Tj = 150 °C

8.14

Ω

VGS = 4.5 V; ID = 75 mA; see Figure 6 and 8

3.8

5.3

Ω

Dynamic characteristics

Ciss

input capacitance

VGS =0V; VDS = 10 V; f = 1 MHz;

see Figure 12

1340pF

Coss

output capacitance

Crss

reverse transfer capacitance

ton

turn-on time

VDS =50V; RL = 250 Ω; VGS =10V;

RG =50 Ω; RGS =50 Ω

toff

turn-off time

Source-drain diode

VSD

source-drain voltage

IS = 300 mA; VGS = 0 V; see Figure 11

0.85

1.5

trr

reverse recovery time

IS = 300 mA; dIS/dt = −100 A/µs; VGS =0V;

VDS =25V

-30

recovered charge

2N7002KA Datasheet(PDF) 5 Page - NXP Semiconductors

2N7002KA Datasheet(HTML) 5 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11

Datasheet Download

Link URL