BLF888_4

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Product data sheet

Rev. 04 — 29 April 2010

4 of 17

NXP Semiconductors

BLF888

UHF power LDMOS transistor

[1]

Measured [dBc] with delta marker at 4.3 MHz from center frequency.

[2]

PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.

6.1 Ruggedness in class-AB operation

The BLF888 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1

power. Ruggedness is measured in the application circuit as described in Section 8.



D

drain efficiency

28

31

-

%

intermodulation distortion shoulder

[1] -

31

28

dBc

PAR

peak-to-average ratio

[2] -8.3

-dB

Table 7.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Fig 1.

Output capacitance as a function of drain-source voltage; typical values per

section; capacitance value without internal matching

001aaj274

060

40

20

150

100

200

250

(pF)

50