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BLF888 Datasheet(PDF) 1 Page - NXP Semiconductors |
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BLF888 Datasheet(HTML) 1 Page - NXP Semiconductors |
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1 / 17 page ![]() 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W average DVB-T broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness of this device makes it ideal for digital transmitter applications. [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. 1.2 Features and benefits 2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq =1.3 A: Peak envelope power load power = 500 W Power gain = 19 dB Drain efficiency = 46 % Third order intermodulation distortion = 32 dBc DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq =1.3 A: Average output power = 110 W Power gain = 19 dB Drain efficiency = 31 % Shoulder distance = 31 dBc (4.3 MHz from center frequency) Integrated ESD protection Advanced flange material for optimum thermal behavior and reliability BLF888 UHF power LDMOS transistor Rev. 04 — 29 April 2010 Product data sheet Table 1. Application information RF performance at VDS = 50 V in a common source 860 MHz narrowband test circuit unless otherwise specified. Mode of operation f PL(PEP) PL(AV) Gp D IMD3 IMDshldr (MHz) (W) (W) (dB) (%) (dBc) (dBc) 2-Tone, class AB f1 = 860; f2 = 860.1 500 250 19 46 32 - DVB-T (8k OFDM) 858 - 110 19 31 - 31 [1] CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. |
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