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BLF888 Datasheet(PDF) 1 Page - NXP Semiconductors

Part # BLF888
Description  UHF power LDMOS transistor
PDF  17 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

BLF888 Datasheet(HTML) 1 Page - NXP Semiconductors

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1.
Product profile
1.1 General description
A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor is optimized for digital applications and can deliver 110 W
average DVB-T broadband over the full UHF band from 470 MHz to 860 MHz. The
excellent ruggedness of this device makes it ideal for digital transmitter applications.
[1]
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
1.2 Features and benefits
2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent
drain current IDq =1.3 A:
Peak envelope power load power = 500 W
Power gain = 19 dB
Drain efficiency = 46 %
Third order intermodulation distortion =
32 dBc
DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent
drain current IDq =1.3 A:
Average output power = 110 W
Power gain = 19 dB
Drain efficiency = 31 %
Shoulder distance =
31 dBc (4.3 MHz from center frequency)
Integrated ESD protection
Advanced flange material for optimum thermal behavior and reliability
BLF888
UHF power LDMOS transistor
Rev. 04 — 29 April 2010
Product data sheet
Table 1.
Application information
RF performance at VDS = 50 V in a common source 860 MHz narrowband test circuit unless
otherwise specified.
Mode of operation
f
PL(PEP) PL(AV) Gp
D
IMD3
IMDshldr
(MHz)
(W)
(W)
(dB)
(%)
(dBc)
(dBc)
2-Tone, class AB
f1 = 860; f2 = 860.1
500
250
19
46
32
-
DVB-T (8k OFDM)
858
-
110
19
31
-
31 [1]
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.


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