Electronic Components Datasheet Search
  English  ▼

X  

BLF888 Datasheet(PDF) 6 Page - NXP Semiconductors

Part # BLF888
Description  UHF power LDMOS transistor
PDF  17 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

BLF888 Datasheet(HTML) 6 Page - NXP Semiconductors

Back Button BLF888 Datasheet HTML 2Page - NXP Semiconductors BLF888 Datasheet HTML 3Page - NXP Semiconductors BLF888 Datasheet HTML 4Page - NXP Semiconductors BLF888 Datasheet HTML 5Page - NXP Semiconductors BLF888 Datasheet HTML 6Page - NXP Semiconductors BLF888 Datasheet HTML 7Page - NXP Semiconductors BLF888 Datasheet HTML 8Page - NXP Semiconductors BLF888 Datasheet HTML 9Page - NXP Semiconductors BLF888 Datasheet HTML 10Page - NXP Semiconductors Next Button
Zoom Inzoom in Zoom Outzoom out
 6 / 17 page
background image
BLF888_4
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 29 April 2010
6 of 17
NXP Semiconductors
BLF888
UHF power LDMOS transistor
7.1.2 DVB-T
7.2 Broadband RF figures
7.2.1 2-Tone
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
Fig 4.
DVB-T power gain and intermodulation
distortion shoulder as function of load power;
typical values
Fig 5.
DVB-T peak-to-average ratio and drain
efficiency as function of load power;
typical values
PL (W)
0
100
200
300
350
250
150
50
001aak643
Gp
(dB)
14
18
22
10
16
20
12
IMDshldr
(dBc)
−40
−20
0
−60
−30
−10
−50
Gp
IMDshldr
PL (W)
0
100
200
300
350
250
150
50
001aak644
PAR
(dB)
4
8
12
0
6
10
2
ηD
(%)
−10
30
70
−50
10
50
−30
PAR
ηD
PL(AV) = 250 W; VDS = 50 V; IDq = 1.3 A; measured in a
common source broadband test circuit as described in
Section 8.
PL(AV) = 250 W; VDS = 50 V; IDq = 1.3 A; measured in a
common source broadband test circuit as described in
Section 8.
Fig 6.
2-Tone power gain and drain efficiency as
function of frequency; typical values
Fig 7.
2-Tone power gain and third order
intermodulation distortion as function of
frequency; typical values
f (MHz)
400
900
800
600
700
500
001aak645
16
12
20
24
14
10
18
22
Gp
(dB)
8
ηD
(%)
40
30
50
60
35
25
45
55
20
Gp
ηD
f (MHz)
400
900
800
600
700
500
001aak646
16
12
20
24
14
10
18
22
Gp
(dB)
8
IMD3
(dBc)
−30
−40
−20
−10
−35
−45
−25
−15
−50
Gp
IMD3



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com