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BLF888 Datasheet(PDF) 7 Page - NXP Semiconductors

Part # BLF888
Description  UHF power LDMOS transistor
PDF  17 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

BLF888 Datasheet(HTML) 7 Page - NXP Semiconductors

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BLF888_4
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 29 April 2010
7 of 17
NXP Semiconductors
BLF888
UHF power LDMOS transistor
7.2.2 DVB-T
7.3 Impedance information
PL(AV) = 110 W; VDS = 50 V; IDq = 1.3 A; measured in a
common source broadband test circuit as described in
Section 8.
PL(AV) = 110 W; VDS = 50 V; IDq = 1.3 A; measured in a
common source broadband test circuit as described in
Section 8.
Fig 8.
DVB-T peak-to-average ratio and drain
efficiency as function of frequency;
typical values
Fig 9.
DVB-T power gain and intermodulation
distortion shoulder as a function of frequency;
typical values
f (MHz)
400
900
800
600
700
500
001aak647
7.5
6.5
8.5
9.5
PAR
(dB)
5.5
ηD
(%)
30
20
40
50
10
PAR
ηD
f (MHz)
400
900
800
600
700
500
001aak648
14
10
18
22
Gp
(dB)
6
IMDshldr
(dB)
−30
−40
−20
−10
−50
Gp
IMDshldr
Fig 10. Definition of transistor impedance
Table 8.
Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL(PEP) = 600 W (DVB-T).
f
Zi
ZL
MHz
300
1.018
 j1.350
5.565 + j0.747
325
1.045
 j1.022
5.435 + j0.752
350
1.076
 j0.722
5.303 + j0.746
375
1.110
 j0.444
5.167 + j0.730
400
1.148
 j0.183
5.030 + j0.704
425
1.190 + j0.064
4.892 + j0.668
450
1.238 + j0.299
4.754 + j0.622
475
1.291 + j0.526
4.617 + j0.567
500
1.351 + j0.746
4.481 + j0.504
001aai086
gate
Zi
drain
ZL



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