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P89LPC985 Datasheet(PDF) 63 Page - NXP Semiconductors |
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P89LPC985 Datasheet(HTML) 63 Page - NXP Semiconductors |
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63 / 85 page ![]() P89LPC980_982_983_985_2 © NXP B.V. 2010. All rights reserved. Preliminary data sheet Rev. 02 — 8 February 2010 63 of 85 NXP Semiconductors P89LPC980/982/983/985 8-bit microcontroller with accelerated two-clock 80C51 core 9. Limiting values [1] The following applies to Table 12: a) This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated maximum. b) Parameters are valid over ambient temperature range unless otherwise specified. All voltages are with respect to VSS unless otherwise noted. [2] Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 k Ω series resistor. Table 12. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).[1] Symbol Parameter Conditions Min Max Unit Tamb(bias) bias ambient temperature −55 +125 °C Tstg storage temperature −65 +150 °C IOH(I/O) HIGH-level output current per input/output pin -20 mA IOL(I/O) LOW-level output current per input/output pin -20 mA II/Otot(max) maximum total input/output current - 100 mA Vxtal crystal voltage on XTAL1, XTAL2 pins when XTAL1/XTAL2 is used as crystal input/output; with respect to VSS −0.5 +4.0 V on XTAL1, XTAL2 pins when XTAL1/XTAL2 is used as GPIO; with respect to VSS −0.5 +5.5 V Vn voltage on any other pin with respect to VSS -5.5 V Ptot(pack) total power dissipation (per package) based on package heat transfer, not device power consumption -1.5 W VESD electrostatic discharge voltage human body model; all pins [2] −3000 +3000 V charged device model; all pins −700 +700 V |
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