100PS datasheet(2/13 Pages) NXP

2 / 13 page

PSMN5R6-100PS_1

Product data sheet

Rev. 01 — 23 November 2009

2 of 13

NXP Semiconductors

PSMN5R6-100PS

N-channel 100 V 5.6 m

Ω standard level MOSFET

Pinning information

Ordering information

Limiting values

[1]

Continious current limited by package.

Table 2.

Pinning information

Symbol

Description

Simplified outline

Graphic symbol

gate

SOT78 (TO-220AB)

drain

source

mounting base; connected to

drain

mbb076

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PSMN5R6-100PS TO-220AB

plastic single-ended package; heatsink mounted; 1 mounting hole;

3-lead TO-220AB

SOT78

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

100

VDGR

drain-gate voltage

Tj ≥ 25 °C; Tj ≤ 175 °C; RGS =20kΩ

-100

VGS

gate-source voltage

-20

drain current

VGS =10V; Tj = 100 °C; see Figure 1

-95

VGS =10V; Tmb =25°C; see Figure 1

[1]

-100

IDM

peak drain current

tp ≤ 10 µs; pulsed; Tmb =25°C; see Figure 3

-539

Ptot

total power dissipation

Tmb =25°C; see Figure 2

-306

Tstg

storage temperature

-55

175

°C

junction temperature

-55

175

°C

Source-drain diode

source current

Tmb =25°C;

[1]

-100

ISM

peak source current

tp ≤ 10 µs; pulsed; Tmb =25°C

539

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