PSMN5R6-100PS_1

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 01 — 23 November 2009

3 of 13

NXP Semiconductors

PSMN5R6-100PS

N-channel 100 V 5.6 m

Ω standard level MOSFET

Fig 1.

Continuous drain current as a function of

mounting base temperature

Fig 2.

Normalized total power dissipation as a

function of mounting base temperature

Fig 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage

003aad683

0

50

100

150

0

50

100

150

200

(A)

(1)

0

200

150

50

100

03aa16

40

80

120

(%)

0

003aad702

1

10

1

10

(A)

DC

100 ms

10 ms

1 ms

10

μs

100

μs