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100PS Datasheet(PDF) 6 Page - NXP Semiconductors |
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100PS Datasheet(HTML) 6 Page - NXP Semiconductors |
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6 / 13 page ![]() PSMN5R6-100PS_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 23 November 2009 6 of 13 NXP Semiconductors PSMN5R6-100PS N-channel 100 V 5.6 m Ω standard level MOSFET Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Forward transconductance as a function of drain current; typical values Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 8. Sub-threshold drain current as a function of gate-source voltage 003aad685 0 40 80 120 160 0 0.5 1 1.5 2 VDS (V) ID (A) 6 8 5 4.5 5.5 VGS (V) = 4 10 003aad692 0 50 100 150 200 250 0 2040 6080 100 ID (A) gfs (S) 003aad687 0 40 80 120 160 02 46 VGS (V) ID (A) Tj = 175 °C Tj = 25 °C 03aa35 VGS (V) 06 4 2 10−4 10−5 10−2 10−3 10−1 ID (A) 10−6 min typ max |
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