100PS datasheet(5/13 Pages) NXP

5 / 13 page

PSMN5R6-100PS_1

Product data sheet

Rev. 01 — 23 November 2009

5 of 13

NXP Semiconductors

PSMN5R6-100PS

N-channel 100 V 5.6 m

Ω standard level MOSFET

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID =250 µA; VGS =0V; Tj =25°C

100

ID =250 µA; VGS =0V; Tj =-55 °C

VGS(th)

gate-source threshold

voltage

ID =1mA; VDS= VGS; Tj =25°C;

see Figure 8 and 9

234

VGSth

ID =1mA; VDS= VGS; Tj =175 °C;

see Figure 9

ID =1mA; VDS= VGS; Tj =-55 °C;

see Figure 9

--4.6

IDSS

drain leakage current

VDS =100 V; VGS =0V; Tj = 25 °C

0.02

µA

VDS =100 V; VGS =0V; Tj = 175 °C

500

µA

IGSS

gate leakage current

VGS =-20 V; VDS =0V; Tj = 25 °C

100

VGS =20V; VDS =0V; Tj = 25 °C

100

RDSon

drain-source on-state

resistance

VGS =10V; ID =25A; Tj = 175 °C;

see Figure 10

--15.7

Ω

VGS =10V; ID =25A; Tj =25°C;

see Figure 11 and 12

-4.3

5.6

Ω

gate resistance

f = 1 MHz

0.97

Ω

Dynamic characteristics

QG(tot)

total gate charge

ID =80A; VDS =50V; VGS =10V;

see Figure 13 and 14

141

QGS

gate-source charge

QGD

gate-drain charge

Ciss

input capacitance

VDS =50V; VGS = 0 V; f = 1 MHz;

Tj =25°C; see Figure 15 and 16

8061

Coss

output capacitance

VDS =50V; VGS = 0 V; f = 1 MHz;

Tj =25°C; see Figure 15

561

Crss

reverse transfer

capacitance

VDS =50V; VGS = 0 V; f = 1 MHz;

Tj =25°C; see Figure 15 and 16

330

td(on)

turn-on delay time

VDS =50V; RL =0.6 Ω; VGS =10V;

RG(ext) =1.5 Ω

-31

rise time

td(off)

turn-off delay time

fall time

Source-drain diode

VSD

source-drain voltage

IS =25A; VGS =0V; Tj =25°C;

see Figure 17

0.79

1.2

trr

reverse recovery time

IS =25A; dIS/dt = -100 A/µs; VGS =0V;

VDS =50V

-67

recovered charge

182

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