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BR9010F Datasheet(PDF) 9 Page - Rohm |
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BR9010F Datasheet(HTML) 9 Page - Rohm |
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9 / 17 page ![]() 9 Memory ICs BR9010 / BR9010F / BR9010FV / BR9020 / BR9020F / BR9040 / BR9040F •Operation timing characteristics BR9040 / F: At 5V (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 5V ± 10%) Parameter Symbol Unit Max. Typ. Min. CS setup time CS hold time Data setup time Data hold time DO rise delay time DO fall delay time Self-timing programming cycle CS minimum high level time READY / BUSY display valid time Time when DO goes High-Z (via CS) Data clock high level time Data clock low level time Write control setup time Write control hold time tCSS tCSH tDIS tDIH tPD1 tPD0 tE / W tCS tSV tOH tWH tWL tWCS tWCH 200 0 150 150 — — — 1 — 0 500 500 0 0 — — — — — — — — — — — — — — — — — — 350 350 10 — 1 400 — — — — ns ns ns ns ns ns ms µs µs ns ns ns ns ns •BR9040 / F: At 3V (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 3V ± 10%) Parameter Symbol Unit Max. Typ. Min. CS setup time CS hold time Data setup time Data hold time DO rise delay time VCC = 3.0 ~ 3.3V DO fall delay time VCC = 3.0 ~ 3.3V DO rise delay time VCC = 2.7 ~ 3.0V DO fall delay time VCC = 2.7 ~ 3.0V Self-timing programming cycle CS minimum high level time READY / BUSY display valid time Time when DO goes High-Z (via CS) Data clock high level time VCC = 3.0 ~ 3.3V Data clock low level time VCC = 3.0 ~ 3.3V Data clock high level time VCC = 2.7 ~ 3.0V Data clock low level time VCC = 2.7 ~ 3.0V Write control setup time Write control hold time tCSS tCSH tDIS tDIH tPD1 tPD0 tPD1 tPD0 tE / W tCS tSV tOH tWH tWL tWH tWL tWCS tWCH 200 0 150 150 — — — — — 1 — 0 500 500 650 650 0 0 — — — — — — — — — — — — — — — — — — — — — — 350 350 500 500 15 — 1 400 — — — — — — ns ns ns ns ns ns ns ns ms µs µs ns ns ns ns ns ns ns |
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