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ISL62391IRTZ Datasheet(PDF) 14 Page - Intersil Corporation |
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ISL62391IRTZ Datasheet(HTML) 14 Page - Intersil Corporation |
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14 / 20 page ![]() 14 FN6666.4 December 22, 2008 ISL62392 monitors the phase voltage when the low-side MOSFET is conducting inductor current to determine its direction. When the output load current is greater than or equal to ½ the inductor ripple current, the inductor current is always positive, and the converter is always in CCM. The ISL62391, ISL62392 minimizes the conduction loss in this condition by forcing the low-side MOSFET to operate as a synchronous rectifier. When the output load current is less than ½ the inductor ripple current, negative inductor current occurs. Sinking negative inductor through the low-side MOSFET lowers efficiency through unnecessary conduction losses. The ISL62391, ISL62392 automatically enters DEM after the PHASE pin has detected positive voltage and LGATE was allowed to go high for 8 consecutive PWM switching cycles. The ISL62391, ISL62392 will turn off the low-side MOSFET once the phase voltage turns positive, indicating negative inductor current. The ISL62391, ISL62392 will return to CCM on the following cycle after the PHASE pin detects negative voltage, indicating that the body diode of the low-side MOSFET is conducting positive inductor current. Efficiency can be further improved with a reduction of unnecessary switching losses by reducing the PWM frequency. It is characteristic of the R3 architecture for the PWM frequency to decrease while in diode emulation. The extent of the frequency reduction is proportional to the reduction of load current. Upon entering DEM, the PWM frequency makes an initial step-reduction because of a 33% step-increase of the window voltage VW. Because the switching frequency in DEM is a function of load current, very light load conditions can produce frequencies well into the audio band. This can be problematic if audible noise is coupled into audio amplifier circuits. To prevent this from occurring, the ISL62391, ISL62392 allows the user to float the FCCM input. This will allow DEM at light loads, but will prevent the switching frequency from going below ~28kHz to prevent noise injection to the audio band. A timer is reset each PWM pulse. If the timer exceeds 30µs, LGATE is turned on, causing the ramp voltage to reduce until another UGATE is commanded by the voltage loop. Overcurrent Protection The overcurrent protection (OCP) setpoint is programmed with resistor, ROCSET, that is connected across the OCSET and PHASE pins. Figure 26 shows the overcurrent-set circuit for SMPS1. The inductor consists of inductance L and the DC resistance (DCR). The inductor DC current IL creates a voltage drop across DCR, which is given by Equation 6: The ISL62391, ISL62392 sinks a 10µA current into the OCSET1 pin, creating a DC voltage drop across the resistor ROCSET, which is given by Equation 7: Resistor RO is connected between the OUT1 pin and the actual output voltage of the converter. During normal operation, the OUT1 pin is a high impedance path, therefore there is no voltage drop across RO. The DC voltage difference between the OCSET1 pin and the OUT1 pin can be established using Equation 8: The ISL62391, ISL62392 monitors the OCSET1 pin and the OUT1 pin voltages. Once the OCSET1 pin voltage is higher than the OUT1 pin voltage for more than 10µs, the ISL62391, ISL62392 declares an OCP fault. The value of ROCSET is then written as Equation 9: Where: -ROCSET (Ω) is the resistor used to program the overcurrent setpoint -IOC is the output current threshold that will activate the OCP circuit - DCR is the inductor DC resistance For example, if IOC is 20A and DCR is 4.5mΩ, the choice of ROCSET is ROCSET = 20A x 4.5mΩ/10µA = 9kΩ. Resistor ROCSET and capacitor CSEN form an R-C network to sense the inductor current. To sense the inductor current correctly, not only in DC operation but also during dynamic operation, the R-C network time constant ROCSET-CSEN FIGURE 26. OVERCURRENT-SET CIRCUIT PHASE1 CO L VO ROCSET CSEN OCSET1 OUT1 RO ISL62391, DCR IL 10¬µ + _ VDCR + _ VROCSET ISL62392 V DCR I L DC R • = (EQ. 6) V ROCSET 10 μAR OCSET • = (EQ. 7) V OCSET1 V – OUT1 I L DC R • 10 μAR OCSET • – = (EQ. 8) (EQ. 9) R OCSET I OC DCR • 10 μA --------------------------- = ISL62391, ISL62392 |
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