OC1005 datasheet(2/12 Pages) NXP

2 / 12 page

OC1005_2

Product data sheet

Rev. 02 — 10 December 2007

2 of 12

NXP Semiconductors

OC1005

N-channel TrenchMOS standard level FET

Ordering information

Limiting values

[1]

Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75 A.

Table 2.

Ordering information

Type number

Package

Name

Description

Version

OC1005

SC-46

plastic single-ended package; heatsink mounted; 1 mounting hole;

3-lead TO-220AB

SOT78

Table 3.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

°C ≤ T

j ≤ 175 °C

VDGR

drain-gate voltage (DC)

°C ≤ T

j ≤ 175 °C; RGS =20kΩ

-55

VGS

gate-source voltage

±20

drain current

Tmb =25 °C; VGS = 10 V; see Figure 2 and 3

[1] -

110

Tmb = 100 °C; VGS = 10 V; see Figure 2

-80

IDM

peak drain current

Tmb =25 °C; pulsed; tp ≤ 10 µs; see Figure 3

390

Ptot

total power dissipation

Tmb =25 °C; see Figure 1

200

Tstg

storage temperature

−55

+175

°C

junction temperature

−55

+175

°C

Source-drain diode

source current

Tmb =25 °C

[1] -

110

ISM

peak source current

Tmb =25 °C; pulsed; tp ≤ 10 µs

390

Avalanche ruggedness

EDS(AL)S non-repetitive drain-source

avalanche energy

unclamped inductive load; ID =75A;

tp = 0.1 ms; VDS ≤ 55 V; RGS =50 Ω;

VGS = 10 V; starting at Tj =25 °C

280

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