OC1005 datasheet(6/12 Pages) NXP

6 / 12 page

OC1005_2

Product data sheet

Rev. 02 — 10 December 2007

6 of 12

NXP Semiconductors

OC1005

N-channel TrenchMOS standard level FET

Tj =25 °CTj =25 °C

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 6.

Drain-source on-state resistance as a function

of drain current; typical values

Tj =25 °C and 175 °C; VDS >ID × RDSon

Fig 7.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 8.

Normalized drain-source on-state resistance

factor as a function of junction temperature

VDS (V)

003aab895

160

240

(A)

Tj = 25 °C

10 V

9 V

8 V

7 V

6 V

8.5 V

VGS = 5 V

003aab896

ID (A)

240

160

RDSon

Ω)

Tj = 25

°C

VGS = 7.5 V 8 V

9 V

8.5 V

10 V

003aab905

VGS (V)

(A)

VDS > ID × RDSon

Tj = 175

°C

Tj (°C)

−60

180

120

060

003aab906

0.5

1.5

DSon

DSon 25

°C

()

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