OC1005_2

© NXP B.V. 2007. All rights reserved.

Product data sheet

Rev. 02 — 10 December 2007

3 of 12

NXP Semiconductors

OC1005

N-channel TrenchMOS standard level FET

Fig 1.

Normalized total power dissipation as a

function of mounting base temperature

Fig 2.

Normalized continuous drain current as a

function of mounting base temperature

Fig 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage

0

200

150

50

100

003aab844

40

80

120

(%)

0

0

200

150

50

100

001aah320

40

80

120

(%)

0

60

100

20

package limiting

current 75 A

P

der

P

tot

P

tot 25

°C

()

------------------------

100 %

×

=

I

der

I

D

I

D25

°C

()

--------------------

100 %

×

=

003aab892

1

10

10

(A)

1

DC

100

µs

1 ms

10 ms