OC1005 datasheet(5/12 Pages) NXP

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OC1005_2

Product data sheet

Rev. 02 — 10 December 2007

5 of 12

NXP Semiconductors

OC1005

N-channel TrenchMOS standard level FET

Characteristics

Table 5.

Characteristics

Tj =25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS =0V

Tj =25 °C55

Tj = −55 °C50

VGS(th)

gate-source threshold voltage

ID = 1 mA; VDS =VGS; see Figure 9 and 10

Tj =25 °C

234V

Tj = 175 °C1

Tj = −55 °C

4.4

IDSS

drain leakage current

VDS = 55 V; VGS =0V

Tj =25 °C

--1

µA

Tj = 175 °C

500

µA

IGSS

gate leakage current

VGS = ±20 V; VDS = 0 V

100

RDSon

drain-source on-state

resistance

VGS =10V; ID = 25 A; see Figure 6 and 8

Tj =25 °C

5.8

7.1

Ω

Tj = 175 °C

10.6

14.2

Ω

Dynamic characteristics

QG(tot)

total gate charge

ID = 25 A; VDS =44V; VGS =10V;

see Figure 11 and 12

-53

QGS

gate-source charge

12.3

QGD

gate-drain charge

Ciss

input capacitance

VGS =0V; VDS = 25 V; f = 1 MHz;

see Figure 14

2820

Coss

output capacitance

554

Crss

reverse transfer capacitance

200

td(on)

turn-on delay time

VDS = 30 V; RL = 1.2 Ω;

rise time

VGS =10V; RG =10 Ω

-52

td(off)

turn-off delay time

fall time

-41

Source-drain diode

VSD

source-drain voltage

IS = 25 A; VGS = 0 V; see Figure 13

0.85

1.2

trr

reverse recovery time

IS = 20 A; dIS/dt = −100 A/µs; VGS = 0 V

recovered charge

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