373 datasheet(27/68 Pages) INTEL

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Datasheet

Electrical Specifications

NOTES:

Unless otherwise noted, all specifications in this table apply to all processor frequencies.

VIL is defined as the maximum voltage level at a receiving agent that will be interpreted as a logical low

value.

VIH is defined as the minimum voltage level at a receiving agent that will be interpreted as a logical high

value.

VIH and VOH may experience excursions above VCCP. However, input signal drivers must comply with the

signal quality specifications in Chapter 3.

This is the pull-down driver resistance. Refer to processor I/O buffer models for I/V characteristics.

Measured at 0.31*VCCP. RON (min) = 0.38*RTT, RON (typ) = 0.45*RTT, RON (max) = 0.52*RTT.

GTLREF should be generated from VCCP with a 1% tolerance resistor divider. The VCCP referred to in these

specifications is the instantaneous VCCP.

RTT is the on-die termination resistance measured at VOL of the AGTL+ output driver. Measured at

0.31*VCCP. RTT is connected to VCCP on die. Refer to processor I/O buffer models for I/V characteristics.

Specified with on die RTT and RON are turned off.

Cpad includes die capacitance only. No package parasitics are included.

NOTES:

Unless otherwise noted, all specifications in this table apply to all processor frequencies.

The VCCP referred to in these specifications refers to instantaneous VCCP.

Measured at 0.1*VCCP.

Measured at 0.9*VCCP.

For Vin between 0 V and VCCP. Measured when the driver is tristated.

Cpad includes die capacitance only. No package parasitics are included.

Table 9.

AGTL+ Signal Group DC Specifications

Symbol

Parameter

Min

Typ

Max

Unit

Notes1

VCCP

I/O Voltage

0.997

1.05

1.102

GTLREF

Reference Voltage

2/3 VCCP - 2%

2/3 VCCP

2/3 VCCP + 2%

VIH

Input High Voltage

GTLREF + 0.1

VCCP + 0.1

3,6

VIL

Input Low Voltage

-0.1

GTLREF - 0.1

2,4

VOH

Output High Voltage

VCCP

RTT

Termination Resistance

RON

Buffer On Resistance

17.7

24.7

32.9

ILI

Input Leakage Current

±100

µA

Cpad

Pad Capacitance

1.8

2.3

2.75

Table 10.

CMOS Signal Group DC Specifications

Symbol

Parameter

Min

Typ

Max

Unit Notes1

VCCP

I/O Voltage

0.997

1.05

1.102

VIH

Input High Voltage

0.7*VCCP

VCCP+0.1

VIL

Input Low Voltage CMOS

-0.1

0.3*VCCP

V2, 3

VOH

Output High Voltage

0.9*VCCP

VCCP

VCCP+0.1

VOL

Output Low Voltage

-0.1

0.1*VCCP

IOH

Output High Current

1.49

4.08

IOL

Output Low Current

1.49

4.08

Input Leakage Current

±100

µA

Cpad

Pad Capacitance

1.0

2.3

3.0

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