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LC6529F Datasheet(PDF) 16 Page - Sanyo Semicon Device |
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LC6529F Datasheet(HTML) 16 Page - Sanyo Semicon Device |
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16 / 39 page ![]() Electrical Characteristics at Ta = –40 to +85°C, VSS = 0 V, VDD = 3.0 to 6.0 V Note: * The RC oscillator and external clock options require a Schmidt trigger configuration for OSC1. Note: * fCFOSC is the allowable oscillator frequency. No. 5117-16/39 LC6529N, LC6529F, LC6529L Parameter Symbol Conditions min typ max Unit Open-drain (OD) configuration for port: With output IIH1 N-channel transistor off. (Includes transistor’s leak 5.0 Input high level current current.) VIN = 13.5 V µA IIH2 PE: Using port E configuration, VIN = VDD 1.0 IIH3 OSC1: Using external clock option, VIN = VDD 1.0 Open-drain (OD) configuration for port: With output IIL1 N-channel transistor off. (Includes transistor’s leak –1.0 current.) VIN = VSS µA Pull-up (PU) resistor configuration for port: IIL2 With output N-channel transistor off. (Includes –220 –71.5 transistor’s leak current.) VIN = VSS Input low level current Pull-up (PU) resistor configuration for port C: IIL3 With output N-channel transistor off. (Includes –6.00 –2.17 mA transistor’s leak current.) VIN = VSS IIL4 PE: Using port E configuration, VIN = VSS –1.0 IIL5 RES: VIN = VSS –45 –10 µA IIL6 OSC1: Using external clock option, VIN = VSS –1.0 VOH1 Pull-up (PU) resistor configuration for port C: VDD – 1.2 Output high level voltage IOH = –300 µA, VDD = 4 to 6 V V VOH2 Pull-up (PU) resistor configuration for port C: VDD – 0.5 IOH = –60 µA VOL1 PA, PC, PD: IOL = 10 mA, VDD = 4 to 6 V 1.5 Output low level voltage VOL2 PA, PC, PD: With IOL for each port less than or equal 0.4 V to 1 mA, IOL = 1.8 mA Hysteresis voltage VHIS1 RES 0.1 VDD V VHIS2 OSC1*: Using RC oscillator or external clock option 0.1 VDD Parameter Symbol Conditions min typ max Unit [Current drain] Ceramic oscillator IDD OP1 VDD: Figure 2, 4 MHz, 200 to 4330 kHz, 1.6 4.0 1/1 frequency divider mA External clock IDD OP2 Note: With output N-channel transistor off and 1.6 4.2 port level = VDD IDD st1 VDD: With output N-channel transistor off and 0.05 10 Standby operation port level = VDD, VDD = 6 V µA IDD st2 VDD: With output N-channel transistor off and 0.025 5 port level = VDD, VDD = 3 V [Oscillator characteristics] (Ceramic oscillator) Oscillator frequency fCFOSC OSC1, OSC2: Figure 2, fO = 4 MHz* 3840 4000 4160 kHz Oscillator stabilization interval tCFS Figure 3, fO = 4 MHz 10 ms [Pull-up resistors] Pull-up (PU) resistor configuration for port A or D: RPP1 With output N-channel transistor off and VIN = VSS, 30 70 130 I/O ports VDD = 5 V Pull-up (PU) resistor configuration for port C: k Ω RPP2 With output N-channel transistor off and VIN = VSS, 1.0 2.3 3.9 VDD = 5 V Reset port Ru RES: VIN = VSS, VDD = 5 V 200 500 725 External reset characteristic: tRST See Reset time Figure 5. Pin capacitance CP f = 1 MHz, VIN = VSS for pins other than one 10 pF being measured |
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