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LC6529F Datasheet(PDF) 21 Page - Sanyo Semicon Device |
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LC6529F Datasheet(HTML) 21 Page - Sanyo Semicon Device |
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21 / 39 page  Electrical Characteristics at Ta = –40 to +85°C, VSS = 0 V, VDD = 2.2 to 6.0 V Note: * The RC oscillator and external clock options require a Schmidt trigger configuration for OSC1. No. 5117-21/39 LC6529N, LC6529F, LC6529L Parameter Symbol Conditions min typ max Unit Open-drain (OD) configuration for port: With output IIH1 N-channel transistor off. (Includes transistor’s leak 5.0 Input high level current current.) VIN = 13.5 V µA IIH2 PE: Using port E configuration, VIN = VDD 1.0 IIH3 OSC1: Using external clock option, VIN = VDD 1.0 Open-drain (OD) configuration for port: With output IIL1 N-channel transistor off. (Includes transistor’s leak –1.0 current.) VIN = VSS µA Pull-up (PU) resistor configuration for port: IIL2 With output N-channel transistor off. (Includes –220 –71.5 transistor’s leak current.) VIN = VSS Input low level current Pull-up (PU) resistor configuration for port C: IIL3 With output N-channel transistor off. (Includes –6.00 –2.17 mA transistor’s leak current.) VIN = VSS IIL4 PE: Using port E configuration, VIN = VSS –1.0 IIL5 RES: VIN = VSS –45 –10 µA IIL6 OSC1: Using external clock option, VIN = VSS –1.0 Output high level voltage VOH Pull-up (PU) resistor configuration for port C: VDD – 0.5 V IOH = –50 µA VOL1 PA, PC, PD: IOL = 3 mA 1.5 Output low level voltage VOL2 PA, PC, PD: With IOL for each port less than 0.4 V or equal to 1 mA, IOL = 1 mA Hysteresis voltage VHIS1 RES 0.1 VDD V VHIS2 OSC1*: Using RC oscillator or external clock option 0.1 VDD Parameter Symbol Conditions min typ max Unit [Current drain] RC oscillator IDD OP1 VDD: Figure 2, 400 kHz (typ) 0.4 1.0 IDD OP2 VDD: Figure 3, 4 MHz, 1/4 frequency divider 1.6 4.0 IDD OP3 VDD: Figure 3, 4 MHz, 1/4 frequency divider, 0.4 0.8 VDD = 2.2 V IDD OP4 VDD: Figure 3, 2 MHz, 1/3 frequency divider 1.3 3.0 mA Ceramic oscillator IDD OP5 VDD: Figure 3, 2 MHz, 1/4 frequency divider 1.3 3.0 IDD OP6 VDD: Figure 3, 2 MHz, 1/3, 1/4 frequency divider 0.3 0.6 VDD = 2.2 V IDD OP7 VDD: Figure 3, 800 kHz 1.1 2.6 IDD OP8 VDD: Figure 3, 400 kHz 0.9 2.4 VDD: 200 to 667 kHz, 1/1 frequency divider, External clock IDD OP9 600 to 2000 kHz, 1/3 frequency divider, 1.0 2.5 mA 800 to 2667 kHz, 1/4 frequency divider IDD st1 VDD: With output N-channel transistor off and 0.05 10 Standby operation port level = VDD, VDD = 6 V µA IDD st2 VDD: With output N-channel transistor off and 0.025 5 port level = VDD, VDD = 2.2 V [Oscillator characteristics] RC oscillator Oscillator frequency fMOSC OSC1, OSC2: Figure 2, Cext = 220 pF ± 5%, 275 400 577 kHz Rext = 12.0 k Ω ± 1% [Oscillator characteristics] (Ceramic oscillator) OSC1, OSC2: Figure 3, fO = 400 kHz 384 400 416 OSC1, OSC2: Figure 3, fO = 800 kHz 768 800 832 Oscillator frequency fCFOSC* OSC1, OSC2: Figure 3, fO = 2 MHz 1920 2000 2080 kHz OSC1, OSC2: Figure 3, fO = 4 MHz, 3840 4000 4160 1/4 frequency divider Figure 4, fO = 400 kHz 10 Oscillator stabilization interval tCFS Figure 4, fO = 800 kHz, 10 ms fO = 2 MHz, 1/3, 1/4 frequency divider, fO = 4 MHz, 1/4 frequency divider Continued on next page. |
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