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S11MD7T Datasheet(PDF) 2 Page - Sharp Corporation |
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S11MD7T Datasheet(HTML) 2 Page - Sharp Corporation |
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2 / 5 page ![]() S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T -30 0 20406080 100 0 0.05 0.10 Fig. 1 RMS ON-state Current vs. Ambient Temperature Ambient temperature T a (˚C) -30 0 25 50 75 100 125 0 10 20 30 40 50 60 70 Fig. 2 Forward Current vs. Ambient Temperature Ambient temperature T a (˚C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Input Forward voltage VF IF = 20mA - 1.2 1.4 V Reverse current IRR =3V V- - 10 -5 A Output Repetitive peak OFF-state current I DRM VDRM = Rated - - 10 -6 A ON-state voltage S11MD7T/S21MD7T S11MD9T/S21MD9T VT IT = 0.1A - 1.5 2.5 V S11MD8T/S21MD8T - 1.7 2.5 Holding current IH VD = 6V 0.1 0.5 3.5 mA Critical rate of rise of OFF-state voltage 2 V DRM = 1/ • Rated 100 - - V/ µs Zere-cross voltage S11MD8T/S21MD8T VOX F = 10mA Resistance load, I - - 35 V Transfer charac- teristics Minimum trigger current S11MD7T/S21MD7T S11MD8T/S21MD8T IFT V D = 6V, RL = 100 Ω -- 5 mA -- 7 S11MD9T/S21MD9T Isolation resistance RISO DC500V, 40 to 60% RH 5x 1010 1011 - Ω Turn-on time S11MD7T ton V D = 6V, R L = 100 Ω IF = 20mA - 70 100 µs - 60 100 S11MD9T/S21MD7T/ S21MD9T -20 50 S11MD8T/S21MD8T s Electro-optical Characteristics ( Ta = 25˚C) dV/dt |
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