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Document Number: 94095

2

Revision: 06-Aug-10

20ETF..FPPbF Soft Recovery Series

Vishay Semiconductors

Fast Soft Recovery

Rectifier Diode, 20 A

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum forward voltage drop

1.30

V

1.67

Forward slope resistance

12.5

m



Threshold voltage

0.9

V

Maximum reverse leakage current

0.1

mA

5.0

RECOVERY CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Reverse recovery time

100 A/μs

25 °C

160

ns

Reverse recovery current

10

A

Reverse recovery charge

1.25

μC

Snap factor

S

Typical

0.6

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage

temperature range

- 40 to 150

°C

Maximum thermal resistance,

junction to case

DC operation

1.5

°C/W

Maximum thermal resistance,

junction to ambient

62

Typical thermal resistance,

case to heatsink

Mounting surface, smooth and greased

1.5

Approximate weight

2g

0.07

oz.

Mounting torque

minimum

6 (5)

kgf · cm

(lbf · in)

maximum

12 (10)

Marking device

Case style TO-220 FULL-PAK

20ETF02FP

20ETF04FP

20ETF06FP

I

FM

t

rr

dir

dt

I

RM(REC)

Q

rr

t

t

a

t

b