20ETF04FN datasheet(4/8 Pages) VISHAY

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Document Number: 94095

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Revision: 06-Aug-10

20ETF..FPPbF Soft Recovery Series

Vishay Semiconductors

Fast Soft Recovery

Rectifier Diode, 20 A

Fig. 7 - Forward Voltage Drop Characteristics

Fig. 8 - Recovery Time Characteristics, TJ = 25 °C

Fig. 9 - Recovery Time Characteristics, TJ = 150 °C

Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C

Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C

Fig. 12 - Recovery Current Characteristics, TJ = 25 °C

1000

012

Instantaneous Forward Voltage (V)

100

J = 25 °C

J = 150 °C

20ETF.. Series

0.20

0.15

200

400

600

800

1000

dI/dt - Rate of Fall of Forward Current (A/µs)

0.05

0.10

20ETF.. Series

J = 25 °C

FM = 1 A

FM = 5 A

FM = 10 A

FM = 20 A

FM = 30 A

0.5

0.3

200

400

600

800

1000

dI/dt - Rate of Fall of Forward Current (A/µs)

0.1

0.2

20ETF.. Series

J = 150 °C

FM = 30 A

FM = 1 A

FM = 20 A

FM = 10 A

FM = 5 A

0.4

4.0

200

400

600

800

1000

dI/dt - Rate of Fall of Forward Current (A/µs)

0.5

2.0

1.0

3.0

20ETF.. Series

J = 25 °C

FM = 30 A

FM = 20 A

FM = 10 A

FM = 5 A

FM = 1 A

1.5

2.5

3.5

200

400

600

800

1000

dI/dt - Rate of Fall of Forward Current (A/µs)

20ETF.. Series

J = 150 °C

FM = 30 A

FM = 20 A

FM = 10 A

FM = 5 A

FM = 1 A

200

400

600

800

1000

dI/dt - Rate of Fall of Forward Current (A/µs)

20ETF.. Series

J = 25 °C

FM = 30 A

FM = 20 A

FM = 10 A

FM = 5 A

FM = 1 A

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