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RL78 Datasheet(PDF) 96 Page - Renesas Technology Corp

Part # RL78
Description  True Low Power Platform (as low as 66 ?쵡/MHz, and 0.60 ?쵡 for RTC LVD), 1.6 V to 5.5 V operation
PDF  100 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RL78 Datasheet(HTML) 96 Page - Renesas Technology Corp

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RL78/G14
2. ELECTRICAL SPECIFICATIONS
R01DS0053EJ0100 Rev. 1.00
Page 96 of 97
Feb 21, 2012
Caution
The pins mounted depend on the product. Refer to 1.3.1 30-pin products to 1.3.10 100-pin products.
2.7
Power Supply Rise Time
2.8
Data Memory STOP Mode Low Supply Voltage Data Retention Characteristics
Note
The value depends on the POR detection voltage. When the voltage drops, the data is retained before a POR reset is
effected, but data is not retained when a POR reset is effected.
2.9
Flash Memory Programming Characteristics
Note
When using flash memory programmer and Renesas Electronics self programming library.
Remark
When updating data multiple times, use the flash memory as one for updating data.
(TA = -40 to +85
C, VSS = EVSS0 = EVSS1 = 0 V)
Parameter
Conditions
MIN.
TYP.
MAX.
Unit
VDD rise inclination
TPUP
53.0
V/ms
(TA = -40 to +85
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Data retention supply
voltage
VDDDR
1.5 Note
5.5
V
(TA = -40 to +85
C, 1.8 V EVDD0 = EVDD1 VDD 5.5 V, VSS = EVSS0 = EVSS1 = 0 V)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
CPU/peripheral hardware
clock frequency
fCLK
1.8 V
 VDD  5.5 V
132
MHz
Number of code flash rewrites Cerwr
1 erase + 1 write after
the erase is regarded as
1 rewrite.
The retaining years are
until next rewrite after
the rewrite.
Retained for 20 years
(Self/serial
programming) Note
1,000
Times
Number of data flash rewrites
Retained for 1 years
(Self/serial
programming) Note
1,000,000
Retained for 5 years
(Self/serial
programming) Note
100,000
VDD
STOP instruction execution
Standby release signal
(interrupt request)
STOP mode
Data retention mode
Operation mode
VDDDR



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