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MPC5645S Datasheet(PDF) 112 Page - Freescale Semiconductor, Inc |
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MPC5645S Datasheet(HTML) 112 Page - Freescale Semiconductor, Inc |
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112 / 146 page ![]() Qorivva MPC5645S Microcontroller Data Sheet, Rev. 8 112 Freescale Semiconductor 4.18.5 DRAM Interface DDR Interface specification from ‘MCD - 32 Bit Automotive MCU - CMOS090LP2’ I/O Pad Specification Revision 1.5 - May14th 2008. This device supports SDR, DDR1, DDR2 half and full strengths, as well as LPDDR half and full speeds. Table 58 shows the SRE settings for the different modes. NOTE The specs mentioned in the following table are preliminary. Table 58. Pad mode configurations ipp_sre[2:0] Mode 000 1.8V LPDDR Half Speed 001 1.8V LPDDR Full Speed 010 1.8V DDR2 Half Strength 011 2.5V DDR1 100 Not supported 101 Not supported 110 1.8V DDR2 Full Strength 111 SDR Table 59. LPDDR, DDR and DDR2 (DDR2-250) SDRAM timing specifications1 2 At recommended operating conditions with VDDE_DR of 5% No. Symbol Parameter Min Max Unit 1 F CC Frequency of Operation (Clock Period) N/A 125 MHz 1.1 tCK CC Clock period N/A 8 ns 2 VIX-AC CC MCK AC differential crosspoint voltage3 VDDE_DR ×0.5 –0.1 VDDE_DR ×0.5 +0.1 V 3 tCH CC CK HIGH pulse width 3, 4 0.47 0.53 TCK 4 tCL CC CK LOW pulse width 3, 4 0.47 0.53 tCK 5 tDQSS CC Skew between MCK and DQS transitions4, 5 150 150 ps 6 tOS(base) CC Address and control output setup time relative to MCK rising edge4, 5 (tCK/2) - 1000 N/A ps 7 tOH(base) CC Address and control output hold time relative to MCK rising edge4, 5 (tCK/2) + 1000 N/A ps 8 tDS1(base) CC DQ and DM output setup time relative to DQS4, 5 (tCK/4) - 750 N/A ps 9 tDH1(base) CC DQ and DM output hold time relative to DQS4, 5 (tCK/4) + 750 N/A ps 10 tDQSQ CC DQS-DQ skew for DQS and associated DQ inputs4 -(tCK/4) - 600 (tCK/4) - 600 ps 11 tDQSEN CC DQS window start position related to CAS read command3, 4, 5, 6, 7 TBD TBD ps |
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