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GC6016 Datasheet(PDF) 39 Page - Texas Instruments |
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GC6016 Datasheet(HTML) 39 Page - Texas Instruments |
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39 / 46 page ![]() CEB Addr OEB WEB Data T0517-01 t su(RD) t su(RD) t dly(RD) t h(RD) t h(RD) t oh(RD) t z(RD) GC6016 www.ti.com SLWS227A – NOVEMBER 2010 – REVISED MARCH 2011 Table 26. MPU Switching Characteristics (READ) PARAMETER TEST CONDITIONS MIN MAX UNIT tsu(RD) CEB and ADDR setup time to ↓OEB See(1) 1.5 ns tdly(RD) Data valid time after ↓OEB See(1) 15 ns th(RD) CEB and ADDR hold time to ↑OEB See(1) 2.5 ns tHIGH(RD) Time OEB must remain HIGH between READs See(1) 6 ns tz(RD) Data goes to high-impedance state after ↑OEB or ↑CEB See(2) 5 ns tcycle(RD) Time between READs See(1) 21 ns toh(RD) Time after OEB ↑ that data is valid See (2) TBD ns (1) Chip specifications are production tested at 90 °C case temperature for the given specification. Early production lots are sample tested at –40°C. (2) Bench tested for output start changing after releasing strobe with a 50- Ω load on the output Figure 25. MPU READ Timing Specifications Table 27. MPU Switching Characteristics (WRITE) PARAMETER TEST CONDITIONS MIN MAX UNIT tsu(WR) CEB, DATA, and ADDR setup time to ↓WEB See(1) 1.4 ns th(WR) CEB, DATA, and ADDR hold time after ↑WEB See(1) 3 ns tlow(WR) Time WEB and CEB must remain simultaneously LOW See(1) 4 ns thigh(WR) Time CEB or WRB must remain HIGH between WRITEs See(1) 7 ns tcycle(WR) Time between WRITEs See(1) 11 ns (1) Chip specifications are production tested at 90 °C case temperature for the given specification. Early production lots are sample tested at –40°C. Copyright © 2010–2011, Texas Instruments Incorporated Submit Documentation Feedback 39 Product Folder Link(s): GC6016 |
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