2N2484HR datasheet(3/12 Pages) STMICROELECTRONICS

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2N2484HR

Electrical characteristics

Doc ID 17734 Rev 1

3/12

Electrical characteristics

Tcase = 25 °C unless otherwise specified.

Table 5.

Electrical characteristics

Symbol

Parameter

Test conditions (1)

Min.

Typ.

Max.

Unit

V(BR)CBO

Collector-base

breakdown voltage

IC = 10 µA

V(BR)CEO

(2)

Collector-emitter

breakdown voltage

IC = 10 mA

V(BR)EBO

Emitter-base breakdown

voltage

IE = 10 µA

ICBO

Collector-base cut-off

current

VCB = 45 V

ICBO

Emitter-base cut-off

current

VEB = 5 V

VCE(SAT)

(2)

Collector-emitter

saturation voltage

IC = 1 mA

IB = 0.1 mA

0.35

hFE

(2)

DC forward current

transfer ratio

IC = 1 µA

VCE = 5 V

IC = 10 µA

VCE = 5 V

IC = 100 µA

VCE = 5 V

IC = 1 mA

VCE = 5 V

IC = 10 mA

VCE = 5 V

100

175

250

500

550

650

800

hfe

High frequency current

Gain 1

VCE = 5 V

IC = 50 µA

f = 5 MHz

High frequency current

Gain 2

VCE = 5 V

IC = 500 µA

f = 30 MHz

Cobo

Output capacitance

VCB = 5 V

IE = 0

f = 1 MHz

-6

Cibo

Input capacitance

VEB = 0.5 V

IC = 0

f = 1 MHz

-6

hFE

Small signal current gain

IC = 1 mA

VCE = 5 V

f = 1 kHz

150

900

hie

Small signal input

impedance

IC = 1 mA

VCE = 5 V

f = 1 kHz

3.5

hoc

Small signal output

impedance

IC = 1 mA

VCE = 5 V

f = 1 kHz

-40

µmho

hre

Small signal reverse

voltage transfer ratio

IC = 1 mA

VCE = 5 V

f = 1 kHz

800

10-6

NFW

Wide-Band noise

VCE = 5 V

IC = 10 µA

RS = 10 kΩ

-3

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