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H6849 Datasheet(PDF) 3 Page - Hi-Sincerity Mocroelectronics |
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H6849 Datasheet(HTML) 3 Page - Hi-Sincerity Mocroelectronics |
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3 / 13 page ![]() HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : IC200804 Issued Date : 2008.09.19 Revised Date : 2009.07.14 Page No. : 3/13 H6849P, H6849S,H6849NF HSMC Product Specification Absolute Maximum Ratings Symbol Parameter Rating Unit VDD Supply voltage Pin Voltage 40 V IOVP VDD OVP maximal enter current 20 mA VFB Input Voltage to FB Pin -0.3 to 6V V VSEN Input Voltage to SEN Pin -0.3 to 6V V PD Power Dissipation 300 mW ESD Capability, HBM Model 2000 V ESD Capability, Machine Model 200 V 20 second SOT-23-6L 220 ℃ TL Lead Temperature (Soldering) 10 second DIP-8 260 ℃ TSTG Storage Temperature Range -55 to + 150 ℃ RECOMMENDED OPERATION CONDITION Symbol Parameter Min ~ Max Unit VDD VDD Supply Voltage 12~20 V RI RI PIN Resistor Value 58~120 K ohm TOA Operation Ambient Temperature -20~85 ℃ PO Output Power 0~60 W FPWM Frequency of PWM 48~100 kHz TYPICAL APPLICATION H6849 |
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