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H6849 Datasheet(PDF) 9 Page - Hi-Sincerity Mocroelectronics |
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H6849 Datasheet(HTML) 9 Page - Hi-Sincerity Mocroelectronics |
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9 / 13 page ![]() HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : IC200804 Issued Date : 2008.09.19 Revised Date : 2009.07.14 Page No. : 9/13 H6849P, H6849S,H6849NF HSMC Product Specification of the VDD is over 26.7V and the voltage of VDD is to descend rapidly. Gate Driver & Soft Clamped H6849’ output designs a totem pole to drive a periphery power MOSFET. The dead time is introduced to minimize the transfixion current when the output is drove. The NMOS is shut off when the other NMOS is turned on. The clamp technology is introduced to protect the periphery power MOSFET from breaking down. PACKAGE DEMENSIONS DIP-8L Dimensions Millimeters Inches Symbol Min. Typ. Max. Min. Typ. Max. A 5.334 0.210 A1 0.381 0.015 A2 3.175 3.302 3.429 0.125 0.130 0.135 b 1.524 0.060 b1 0.457 0.018 D 9.017 9.271 10.160 0.355 0.365 0.400 E 7.620 0.300 E1 6.223 6.350 6.477 0.245 0.250 0.255 e 2.540 0.100 L 2.921 3.302 3.810 0.115 0.130 0.150 eB 8.509 9.017 9.525 0.335 0.355 0.375 θ˚ 0˚ 7˚ 15˚ 0˚ 7˚ 15˚ |
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