476KXM063M datasheet(5/18 Pages) FREESCALE

Part #	476KXM063M

Description	RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

PDF	18 Pages

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

Direct Link	http://www.freescale.com

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5 / 18 page

MRF6V2150NR1 MRF6V2150NBR1

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

1000

020

VDS, DRAIN--SOURCE VOLTAGE (VOLTS)

Figure 4. Capacitance versus Drain--Source Voltage

Ciss

100

TC =25°C

VDS, DRAIN--SOURCE VOLTAGE (VOLTS)

Figure 5. DC Safe Operating Area

DRAIN VOLTAGE (VOLTS)

120

Figure 6. DC Drain Current versus Drain Voltage

Pout, OUTPUT POWER (WATTS) CW

Figure 7. CW Power Gain versus Output Power

VDD =50 Vdc

f = 220 MHz

100

VGS =3 V

Coss

Crss

100

2.75 V

2.63 V

2.5 V

2.25 V

100

--60

--10

Pout, OUTPUT POWER (WATTS) PEP

--25

--30

--35

--40

100

Figure 8. Third Order Intermodulation Distortion

versus Output Power

VDD = 50 Vdc, f1 = 220 MHz, f2 = 220.1 MHz

Two--Tone Measurements, 100 kHz Tone Spacing

--45

--50

Pin, INPUT POWER (dBm)

Figure 9. CW Output Power versus Input Power

P3dB = 52.61 dBm (182.39 W)

Actual

Ideal

P1dB = 52.27 dBm (168.66 W)

VDD =50 Vdc,IDQ = 450 mA

f = 220 MHz

200

563 mA

IDQ = 675 mA

IDQ = 225 mA

336 mA

Measured with ±30 mV(rms)ac @ 1 MHz

VGS =0 Vdc

450 mA

337 mA

225 mA

--55

--15

--20

450 mA

563 mA

685 mA

900 mA

300

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