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PIC18F23K22 Datasheet(PDF) 14 Page - Microchip Technology |
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PIC18F23K22 Datasheet(HTML) 14 Page - Microchip Technology |
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14 / 42 page ![]() PIC18(L)F2XK22/4XK22 DS41398B-page 14 Advance Information 2010 Microchip Technology Inc. FIGURE 3-2: BULK ERASE TIMING DIAGRAM 3.1.2 LOW-VOLTAGE ICSP BULK ERASE When using low-voltage ICSP, the part must be supplied by the voltage specified in parameter D111 if a Bulk Erase is to be executed. All other Bulk Erase details as described above apply. If it is determined that a program memory erase must be performed at a supply voltage below the Bulk Erase limit, refer to the erase methodology described in Section 3.1.3 “ICSP Row Erase” and Section 3.2.1 “Modifying Code Memory”. If it is determined that a data EEPROM erase must be performed at a supply voltage below the Bulk Erase limit, follow the methodology described in Section 3.3 “Data EEPROM Programming” and write ‘1’s to the array. 3.1.3 ICSP ROW ERASE Regardless of whether high or low-voltage ICSP is used, it is possible to erase one row (64 bytes of data), provided the block is not code or write-protected. Rows are located at static boundaries beginning at program memory address 000000h, extending to the internal program memory limit (see Section 2.3 “Memory Maps”). The Row Erase duration is self-timed. After the WR bit in EECON1 is set, two NOPs are issued. Erase starts upon the 4th PGC of the second NOP. It ends when the WR bit is cleared by hardware. The code sequence to Row Erase is shown in Table 3-3. The flowchart shown in Figure 3-3 depicts the logic necessary to completely erase the device. The timing diagram for Row Erase is identical to the data EEPROM write timing shown in Figure 3-7. n 12 3 4 1 215 16 12 3 PGC P5 P5A PGD PGD = Input 0 00 1 1 P11 P10 Erase Time 00 0 0 0 0 12 00 4 0 1 2 15 16 P5 12 3 P5A 4 000 0 n 4-bit Command 4-bit Command 4-bit Command 16-bit Data Payload 16-bit Data Payload 16-bit Data Payload 11 Note: The TBLPTR register can point at any byte within the row intended for erase. |
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